- Technology :
- Operating Temperature :
- Supplier Device Package :
- FET Type :
- Rds On (Max) @ Id, Vgs :
-
- 105 mOhm @ 3.4A, 10V (1)
- 112 mOhm @ 3.4A, 10V (1)
- 130 mOhm @ 1A, 10V (1)
- 130 mOhm @ 3.4A, 10V (1)
- 30 mOhm @ 1.5A, 5V (1)
- 59 mOhm @ 3A, 4.5V (1)
- 60 mOhm @ 2.5A, 4.5V (1)
- 60 mOhm @ 3.4A, 4.5V (1)
- 62 mOhm @ 5.4A, 10V (1)
- 63 mOhm @ 3.4A, 4.5V (1)
- 72 mOhm @ 3.6A, 4.5V (1)
- 78 mOhm @ 500mA, 8V (1)
- 90 mOhm @ 3.4A, 10V (1)
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
13 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
|
VIEW |
3,457
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 3.4A 8-SOIC | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 5W (Ta) | N-Channel | 100V | 3.4A (Ta) | 105 mOhm @ 3.4A, 10V | 4V @ 250µA | 4nC @ 10V | 208pF @ 50V | 6V, 10V | ±20V | |||
|
VIEW |
2,149
In-stock
|
Diodes Incorporated | MOSFET P-CHAN 8V 24V X4-DSN1006- | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | X4-DSN1006-3 | 810mW (Ta) | P-Channel | 20V | 3.4A (Ta) | 78 mOhm @ 500mA, 8V | 1.2V @ 250µA | 1.6nC @ 4.5V | 228pF @ 10V | 1.8V, 8V | -12V | |||
|
VIEW |
2,179
In-stock
|
Infineon Technologies | MOSFET P-CH 40V 3.4A 6-TSOP | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | Micro6™(TSOP-6) | 2W (Ta) | P-Channel | 40V | 3.4A (Ta) | 112 mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | 1110pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,905
In-stock
|
Diodes Incorporated | MOSFET N-CH 20V 3.4A SOT23-3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 1W (Ta) | N-Channel | 20V | 3.4A (Ta) | 60 mOhm @ 3.4A, 4.5V | 700mV @ 250µA | 6.6nC @ 4.5V | 544pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
664
In-stock
|
ON Semiconductor | MOSFET N CH 150V 3.4A POWER33 | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | Power33 | 2.3W (Ta), 36W (Tc) | N-Channel | 150V | 3.4A (Ta) | 90 mOhm @ 3.4A, 10V | 4V @ 250mA | 9nC @ 10V | 525pF @ 75V | 6V, 10V | ±20V | |||
|
VIEW |
2,575
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 3.4A 1212-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 1.5W (Ta) | N-Channel | 100V | 3.4A (Ta) | 62 mOhm @ 5.4A, 10V | 4.5V @ 250µA | 17nC @ 10V | - | 6V, 10V | ±20V | |||
|
VIEW |
3,305
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 3.4A ES6 | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | P-Channel | 20V | 3.4A (Ta) | 59 mOhm @ 3A, 4.5V | 1V @ 1mA | 10.4nC @ 4.5V | 630pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
|
VIEW |
2,226
In-stock
|
Diodes Incorporated | MOSFET N-CH 20V 3.4A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 760mW (Ta) | N-Channel | 20V | 3.4A (Ta) | 72 mOhm @ 3.6A, 4.5V | 1.4V @ 250µA | 3.8nC @ 4.5V | 292pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
2,896
In-stock
|
ON Semiconductor | MOSFET P-CH 30V 3.4A SOT-223 | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223-4 | 3W (Ta) | P-Channel | 30V | 3.4A (Ta) | 130 mOhm @ 3.4A, 10V | 3V @ 250µA | 3.5nC @ 10V | 205pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
770
In-stock
|
Diodes Incorporated | MOSFET N-CH 20V 3.4A SOT23-3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 950mW (Ta) | N-Channel | 20V | 3.4A (Ta) | 60 mOhm @ 2.5A, 4.5V | 1.5V @ 250µA | 2.8nC @ 4.5V | 277pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
2,689
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 3.4A SOT23 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.3W (Ta) | N-Channel | 30V | 3.4A (Ta) | 63 mOhm @ 3.4A, 4.5V | 1.1V @ 10µA | 2.9nC @ 4.5V | 270pF @ 24V | 2.5V, 4.5V | ±12V | |||
|
|
VIEW |
3,899
In-stock
|
ON Semiconductor | MOSFET P-CH 30V 3.4A 8SOIC | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | 30V | 3.4A (Ta) | 130 mOhm @ 1A, 10V | 3V @ 250µA | 3.5nC @ 5V | 205pF @ 15V | 4.5V, 10V | ±25V | |||
|
VIEW |
959
In-stock
|
EPC | MOSFET NCH 15V 3.4A DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 15V | 3.4A (Ta) | 30 mOhm @ 1.5A, 5V | 2.5V @ 1mA | 0.93nC @ 5V | 105pF @ 6V | 5V | - | |||
