- Manufacture :
- Technology :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Vgs (Max) :
- Applied Filters :
8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
615
In-stock
|
Infineon Technologies | MOSFET N-CH 80V 12A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MN | DIRECTFET™ MN | 2.8W (Ta), 89W (Tc) | N-Channel | - | 80V | 12A (Ta), 68A (Tc) | 9.5 mOhm @ 12A, 10V | 4.9V @ 150µA | 50nC @ 10V | 2060pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,391
In-stock
|
EPC | GANFET N-CH 80V 18A DIE | Automotive, AEC-Q101, eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (6-Solder Bar) | - | N-Channel | - | 80V | 18A | 17 mOhm @ 11A, 5V | 2.5V @ 3mA | 4nC @ 5V | 415pF @ 50V | 5V | +5.75V, -4V | |||
|
VIEW |
779
In-stock
|
Infineon Technologies | MOSFET N-CH 80V 18A WDSON-2 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 3-WDSON | MG-WDSON-2, CanPAK M™ | 2.2W (Ta), 78W (Tc) | N-Channel | - | 80V | 18A (Ta), 90A (Tc) | 4.4 mOhm @ 30A, 10V | 3.5V @ 97µA | 73nC @ 10V | 5700pF @ 40V | 10V | ±20V | |||
|
VIEW |
3,222
In-stock
|
EPC | GANFET N-CH 80V 1.7A 6SOLDER BAR | Automotive, AEC-Q101, eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 80V | 1.7A | 80 mOhm @ 1A, 5V | 2.5V @ 600µA | 0.83nC @ 5V | 88pF @ 50V | 5V | +5.75V, -4V | |||
|
|
VIEW |
1,846
In-stock
|
Infineon Technologies | MOSFET N-CH 80V 55A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 80V | 55A (Tc) | 15 mOhm @ 12A, 10V | 4.9V @ 100µA | 31nC @ 10V | 1320pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,286
In-stock
|
EPC | TRANS GAN 80V 90A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 80V | 90A (Ta) | 2.5 mOhm @ 29A, 5V | 2.5V @ 14mA | 15nC @ 5V | 1650pF @ 40V | 5V | +6V, -4V | |||
|
VIEW |
2,648
In-stock
|
EPC | TRANS GAN 80V 31A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 80V | 48A (Ta) | 3.2 mOhm @ 30A, 5V | 2.5V @ 12mA | 13nC @ 5V | 1410pF @ 40V | 5V | +6V, -4V | |||
|
VIEW |
873
In-stock
|
EPC | TRANS GAN 80V BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 80V | 6.8A (Ta) | 25 mOhm @ 6A, 5V | 2.5V @ 2mA | 2.4nC @ 5V | 210pF @ 40V | 5V | +6V, -4V | |||
