- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,464
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 60V 5A PW-MOLD | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PW-MOLD | 20W (Tc) | P-Channel | 60V | 5A (Ta) | 190 mOhm @ 2.5A, 10V | 2V @ 1mA | 22nC @ 10V | 630pF @ 10V | 4V, 10V | ±20V | |||
|
VIEW |
2,699
In-stock
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Diodes Incorporated | MOSFET P-CH 30V 6.8A U-DFN2020-6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type E) | 660mW (Ta) | P-Channel | 30V | 6.8A (Ta) | 32 mOhm @ 7A, 10V | 2.4V @ 250µA | 22nC @ 10V | 1241pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,170
In-stock
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Diodes Incorporated | MOSFET P-CH 30V 27A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 1.6W (Ta) | P-Channel | 30V | 27A (Tc) | 25 mOhm @ 7A, 10V | 2.4V @ 250µA | 22nC @ 10V | 1241pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,758
In-stock
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Vishay Siliconix | MOSFET P-CH 200V 3.5A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3W (Ta), 40W (Tc) | P-Channel | 200V | 3.5A (Tc) | 1.5 Ohm @ 1.5A, 10V | 4V @ 250µA | 22nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
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VIEW |
2,904
In-stock
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Rohm Semiconductor | MOSFET P-CH 30V 7.5A 8DFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerUDFN | HUML2020L8 | 2W (Ta) | P-Channel | 30V | 7.5A (Ta) | 21.7 mOhm @ 7.5A, 10V | 2.5V @ 1mA | 22nC @ 10V | 1000pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,867
In-stock
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Diodes Incorporated | MOSFET P-CH 30V 6.8A U-DFN2020-6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type E) | 660mW (Ta) | P-Channel | 30V | 6.8A (Ta) | 32 mOhm @ 7A, 10V | 2.4V @ 250µA | 22nC @ 10V | 1241pF @ 15V | 4.5V, 10V | ±20V | |||
