- Part Status :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
5 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | |||||||||||||||||||||||||
|
VIEW |
806
In-stock
|
Nexperia USA Inc. | MOSFET P-CH 30V 300MA 3DFN | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | 3-DFN1006B (0.6x1) | 360mW (Ta), 2.7W (Tc) | P-Channel | 30V | 300mA (Ta) | 4.1 Ohm @ 200mA, 4.5V | 1.1V @ 250µA | 0.72nC @ 4.5V | 46pF @ 15V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
1,180
In-stock
|
Nexperia USA Inc. | MOSFET P-CH 50V 230MA 3DFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | 3-DFN1006B (0.6x1) | 360mW (Ta), 2.7W (Tc) | P-Channel | 50V | 230mA (Ta) | 7.5 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35nC @ 5V | 36pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,734
In-stock
|
Nexperia USA Inc. | MOSFET P-CH 20V 1A 3DFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | 3-DFN1006B (0.6x1) | 360mW (Ta), 3.125W (Tc) | P-Channel | 20V | 1A (Ta) | 450 mOhm @ 300mA, 4.5V | 950mV @ 250µA | 1.9nC @ 4.5V | 127pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
1,718
In-stock
|
Nexperia USA Inc. | MOSFET P-CH 20V 500MA 3DFN1006B | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | 3-DFN1006B (0.6x1) | 360mW (Ta) | P-Channel | 20V | 500mA (Ta) | 1.4 Ohm @ 500mA, 4.5V | 950mV @ 250µA | 2.1nC @ 4.5V | 43pF @ 10V | 1.2V, 4.5V | ±8V | |||
|
VIEW |
3,403
In-stock
|
Nexperia USA Inc. | MOSFET P-CH 20V 680MA DFN1006B-3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | 3-DFN1006B (0.6x1) | 360mW (Ta), 2.7W (Tc) | P-Channel | 20V | 680mA (Ta) | 850 mOhm @ 400mA, 4.5V | 1.3V @ 250µA | 1.14nC @ 4.5V | 87pF @ 10V | 1.8V, 4.5V | ±8V |