Gate Charge (Qg) (Max) @ Vgs :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RSQ015P10TR
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Rohm Semiconductor MOSFET P-CH 100V 1.5A TSMT6 - Not For New Designs Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 TSMT6 (SC-95) 600mW (Ta) P-Channel 100V 1.5A (Ta) 470 mOhm @ 1.5A, 10V 2.5V @ 1mA 17nC @ 5V 950pF @ 25V 4V, 10V ±20V
RQ6P015SPTR
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Rohm Semiconductor MOSFET P-CH 100V 1.5A TSMT - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 TSMT6 (SC-95) 600mW (Ta) P-Channel 100V 1.5A (Ta) 470 mOhm @ 1.5A, 10V 2.5V @ 1mA 322nC @ 10V 950pF @ 25V 4V, 10V ±20V