Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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NTTS2P03R2G
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ON Semiconductor MOSFET P-CH 30V 2.48A 8MICRO - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Micro8™ 600mW (Ta) P-Channel 30V 2.1A (Ta) 85 mOhm @ 2.48A, 10V 3V @ 250µA 22nC @ 4.5V 500pF @ 24V 4.5V, 10V ±20V
NTGS5120PT1G
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2,944
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ON Semiconductor MOSFET P-CH 60V 1.8A 6-TSOP - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 6-TSOP 600mW (Ta) P-Channel 60V 1.8A (Ta) 111 mOhm @ 2.9A, 10V 3V @ 250µA 18.1nC @ 10V 942pF @ 30V 4.5V, 10V ±20V
DMP25H18DLFDE-7
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1,460
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Diodes Incorporated MOSFET P-CH 250V 0.26A DFN2020-6 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad U-DFN2020-6 (Type E) 600mW (Ta) P-Channel 250V 260mA (Ta) 14 Ohm @ 200mA, 10V 2.5V @ 1mA 2.8nC @ 10V 81pF @ 25V 3.5V, 10V ±40V
NVGS5120PT1G
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RFQ
2,952
In-stock
ON Semiconductor MOSFET P-CH 60V 1.8A 6TSOP - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 6-TSOP 600mW (Ta) P-Channel 60V 1.8A (Ta) 111 mOhm @ 2.9A, 10V 3V @ 250µA 18.1nC @ 10V 942pF @ 30V 4.5V, 10V ±20V