- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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5 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
771
In-stock
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Infineon Technologies | MOSFET P-CH 55V 3.4A 8-SOIC | FETKY™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | P-Channel | Schottky Diode (Isolated) | 55V | 3.4A (Ta) | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 38nC @ 10V | 690pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,981
In-stock
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Infineon Technologies | MOSFET P-CH 40V 3.4A 8-SOIC | FETKY™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | P-Channel | Schottky Diode (Isolated) | 40V | 3.4A (Ta) | 112 mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | 1110pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,502
In-stock
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Infineon Technologies | MOSFET P-CH 30V 4.7A 8-SOIC | FETKY™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | P-Channel | Schottky Diode (Isolated) | 30V | 4.7A (Ta) | 62 mOhm @ 4.9A, 10V | 1V @ 250µA | 34nC @ 10V | 710pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,874
In-stock
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Infineon Technologies | MOSFET P-CH 30V 2A MICRO8 | FETKY™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ | 1.25W (Ta) | P-Channel | Schottky Diode (Isolated) | 30V | 2A (Ta) | 200 mOhm @ 1.2A, 10V | 1V @ 250µA | 11nC @ 10V | 180pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,636
In-stock
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Infineon Technologies | MOSFET P-CH 30V 3.6A 8-SOIC | FETKY™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | P-Channel | Schottky Diode (Isolated) | 30V | 3.6A (Ta) | 100 mOhm @ 1.8A, 10V | 1V @ 250µA | 25nC @ 10V | 440pF @ 25V | 4.5V, 10V | ±20V |