- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1.05 Ohm @ 2.9A, 10V (1)
- 109 mOhm @ 15.4A, 10V (1)
- 155 mOhm @ 10A, 10V (1)
- 170 mOhm @ 10A, 10V (1)
- 190 mOhm @ 10A, 10V (1)
- 190 mOhm @ 7.9A, 10V (2)
- 250 mOhm @ 6.9A, 10V (1)
- 300 mOhm @ 5.8A, 10V (1)
- 300 mOhm @ 6.9A, 10V (1)
- 340 mOhm @ 5.8A, 10V (1)
- 380 mOhm @ 4.9A, 10V (1)
- 430 mOhm @ 4.9A, 10V (1)
- 440 mOhm @ 5.5A, 10V (1)
- 500 mOhm @ 4A, 10V (1)
- 560 mOhm @ 4.6A, 10V (1)
- 560 mOhm @ 4A, 10V (1)
- 600 mOhm @ 3.5A, 10V (1)
- 670 mOhm @ 3.5A, 10V (1)
- 800 mOhm @ 3.4A, 10V (1)
- 820 mOhm @ 3.1A, 10V (1)
- 900 mOhm @ 2.7A, 10V (1)
- 98 mOhm @ 15.4A, 10V (1)
- Vgs(th) (Max) @ Id :
-
- 3.5V @ 180µA (1)
- 3.5V @ 250µA (1)
- 3.5V @ 350µA (1)
- 3.5V @ 450µA (1)
- 3.5V @ 690µA (1)
- 3.7V @ 1.5mA (1)
- 3.7V @ 1mA (2)
- 3.7V @ 270µA (1)
- 3.7V @ 310µA (1)
- 3.7V @ 350µA (1)
- 3.7V @ 400µA (1)
- 3.7V @ 500µA (2)
- 3.7V @ 600µA (2)
- 3.7V @ 790µA (2)
- 4.5V @ 1.5mA (1)
- 4.5V @ 1mA (1)
- 4.5V @ 350µA (1)
- 4.5V @ 400µA (1)
- 4.5V @ 690µA (1)
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
23 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
1,170
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A 5DFN | DTMOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 139W (Tc) | N-Channel | Super Junction | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | ||||
VIEW |
1,470
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 11.5A 5DFN | DTMOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 104W (Tc) | N-Channel | Super Junction | 600V | 11.5A (Ta) | 300 mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | ||||
VIEW |
3,712
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 11.5A DPAK | DTMOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | Super Junction | 600V | 11.5A (Ta) | 340 mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | ||||
VIEW |
2,081
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 8A DPAK | DTMOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | Super Junction | 600V | 8A (Ta) | 500 mOhm @ 4A, 10V | 3.7V @ 400µA | 18.5nC @ 10V | 570pF @ 300V | 10V | ±30V | ||||
VIEW |
680
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 30.8A 5DFN | DTMOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 240W (Tc) | N-Channel | Super Junction | 600V | 30.8A (Ta) | 98 mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86nC @ 10V | 3000pF @ 300V | 10V | ±30V | ||||
VIEW |
3,810
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9.7A 5DFN | DTMOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 88.3W (Tc) | N-Channel | Super Junction | 600V | 9.7A (Ta) | 380 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | ||||
VIEW |
2,589
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 7A DPAK | DTMOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | Super Junction | 600V | 7A (Ta) | 600 mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15nC @ 10V | 490pF @ 300V | 10V | ±30V | ||||
VIEW |
2,270
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 6.2A DPAK | DTMOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | Super Junction | 600V | 6.2A (Ta) | 820 mOhm @ 3.1A, 10V | 3.7V @ 310µA | 12nC @ 10V | 390pF @ 300V | 10V | ±30V | ||||
VIEW |
1,291
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A D2PAK | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | 1300pF @ 300V | 10V | ±30V | ||||
VIEW |
1,724
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 5.4A DPAK | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | Super Junction | 600V | 5.4A (Ta) | 900 mOhm @ 2.7A, 10V | 3.7V @ 270µA | 10.5nC @ 10V | 380pF @ 300V | 10V | ±30V | ||||
VIEW |
2,636
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A DPAK | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 300 mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | 1300pF @ 300V | 10V | ±30V | ||||
VIEW |
988
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5.8A DPAK | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 650V | 5.8A (Ta) | 1.05 Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11nC @ 10V | 390pF @ 300V | 10V | ±30V | ||||
VIEW |
2,362
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 20A D2PAK | DTMOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 165W (Tc) | N-Channel | Super Junction | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | ||||
VIEW |
823
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 20A 5DFN | DTMOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 156W (Tc) | N-Channel | Super Junction | 600V | 20A (Ta) | 170 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | ||||
VIEW |
2,120
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A D2PAK | DTMOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | Super Junction | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | ||||
VIEW |
1,746
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 7A DPAK | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | Super Junction | 600V | 7A (Ta) | 670 mOhm @ 3.5A, 10V | 4.5V @ 350µA | 16nC @ 10V | 490pF @ 300V | 10V | ±30V | ||||
VIEW |
3,815
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A 5DFN | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 156W (Tc) | N-Channel | - | 600V | 20A (Ta) | 190 mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | 1800pF @ 300V | 10V | ±30V | ||||
VIEW |
1,485
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 9.7A DPAK | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | Super Junction | 600V | 9.7A (Ta) | 430 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | ||||
VIEW |
1,673
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 11.1A DPAK-0S | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | - | 650V | 11.1A (Ta) | 440 mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | ||||
VIEW |
2,363
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 9.3A DPAK | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | - | 650V | 9.3A (Ta) | 560 mOhm @ 4.6A, 10V | 3.5V @ 350µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | ||||
VIEW |
3,254
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 8A DPAK | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | - | 600V | 8A (Ta) | 560 mOhm @ 4A, 10V | 4.5V @ 400µA | 22nC @ 10V | 590pF @ 300V | 10V | ±30V | ||||
VIEW |
2,864
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 6.8A DPAK | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 650V | 6.8A (Ta) | 800 mOhm @ 3.4A, 10V | 3.5V @ 250µA | 15nC @ 10V | 490pF @ 300V | 10V | ±30V | ||||
VIEW |
3,327
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N -CH 600V 30.8A DFN | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 240W (Tc) | N-Channel | - | 600V | 30.8A (Ta) | 109 mOhm @ 15.4A, 10V | 4.5V @ 1.5mA | 105nC @ 10V | 3000pF @ 300V | 10V | ±30V |