- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,512
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 1.9A UFV | U-MOSIII | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD (5 Leads), Flat Lead | UFV | 500mW (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 1.9A (Ta) | 133 mOhm @ 1A, 4V | 1V @ 1mA | 1.9nC @ 4V | 123pF @ 15V | 1.8V, 4V | ±12V | |||
|
VIEW |
3,786
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V .5A CST4 | U-MOSIII | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-SMD, No Lead | CST4 (1.2x0.8) | 400mW (Ta) | N-Channel | - | 20V | 500mA (Ta) | 205 mOhm @ 250mA, 4V | 1.1V @ 1mA | - | 174pF @ 10V | 1.8V, 4V | ±12V | |||
|
VIEW |
1,322
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.2A UFM | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | N-Channel | - | 30V | 2.2A (Ta) | 100 mOhm @ 500mA, 4.5V | 1.1V @ 100µA | - | 245pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
809
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 3.5A 2-3Z1A | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 30V | 3.5A (Ta) | 126 mOhm @ 1A, 4V | 1V @ 1mA | 1.5nC @ 4V | 123pF @ 15V | 1.8V, 4V | ±12V | |||
