- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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15 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,815
In-stock
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Infineon Technologies | MOSFET N-CH 200V 96A HSOF-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerSFN | PG-HSOF-8 | 375W (Tc) | N-Channel | - | 200V | 96A (Tc) | 11.1 mOhm @ 96A, 10V | 4V @ 267µA | 87nC @ 10V | 7000pF @ 100V | 10V | ±20V | |||
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VIEW |
3,556
In-stock
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Infineon Technologies | MOSFET N-CH 200V 88A TO263-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 300W (Tc) | N-Channel | - | 200V | 88A (Tc) | 10.7 mOhm @ 88A, 10V | 4V @ 270µA | 87nC @ 10V | 7100pF @ 100V | 10V | ±20V | |||
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VIEW |
3,658
In-stock
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Infineon Technologies | MOSFET N-CH 200V 7A 8TDSON | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 34W (Tc) | N-Channel | - | 200V | 7A (Tc) | 225 mOhm @ 3.5A, 10V | 4V @ 13µA | 5.6nC @ 10V | 430pF @ 100V | 10V | ±20V | |||
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VIEW |
640
In-stock
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Infineon Technologies | MOSFET N-CH 200V 36A TDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 125W (Tc) | N-Channel | - | 200V | 36A (Tc) | 32 mOhm @ 36A, 10V | 4V @ 90µA | 29nC @ 10V | 2350pF @ 100V | 10V | ±20V | |||
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VIEW |
3,651
In-stock
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Infineon Technologies | MOSFET N-CH 200V 24A TDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 96W (Tc) | N-Channel | - | 200V | 24A (Tc) | 50 mOhm @ 22A, 10V | 4V @ 60µA | 15nC @ 10V | 1580pF @ 100V | 10V | ±20V | |||
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VIEW |
895
In-stock
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Infineon Technologies | MOSFET N-CH 200V 15.2A 8TDSON | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 62.5W (Tc) | N-Channel | - | 200V | 15.2A (Tc) | 90 mOhm @ 7.6A, 10V | 4V @ 30µA | 11.6nC @ 10V | 920pF @ 100V | 10V | ±20V | |||
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VIEW |
1,232
In-stock
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Infineon Technologies | MOSFET N-CH 200V 84A D2PAK | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3 | 300W (Tc) | N-Channel | - | 200V | 84A (Tc) | 11.7 mOhm @ 84A, 10V | 4V @ 270µA | 87nC @ 10V | 6650pF @ 100V | 10V | ±20V | |||
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VIEW |
3,289
In-stock
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Infineon Technologies | MOSFET N-CH 200V 35A 8TDSON | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 150W (Tc) | N-Channel | - | 200V | 35A (Tc) | 35 mOhm @ 35A, 10V | 4V @ 90µA | 30nC @ 10V | 2410pF @ 100V | 10V | ±20V | |||
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VIEW |
2,613
In-stock
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Infineon Technologies | MOSFET N-CH 200V 15.2A 8TSDSON | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8 | 62.5W (Tc) | N-Channel | - | 200V | 15.2A (Tc) | 90 mOhm @ 7.6A, 10V | 4V @ 30µA | 11.6nC @ 10V | 920pF @ 100V | 10V | ±20V | |||
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VIEW |
3,603
In-stock
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Infineon Technologies | MOSFET N-CH 200V 88A TO263-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 300W (Tc) | N-Channel | - | 200V | 88A (Tc) | 10.7 mOhm @ 88A, 10V | 4V @ 270µA | 87nC @ 10V | 7100pF @ 100V | 10V | ±20V | |||
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VIEW |
3,399
In-stock
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Infineon Technologies | MOSFET N-CH 200V 11.3A 8TSDSON | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8 | 50W (Tc) | N-Channel | - | 200V | 11.3A (Tc) | 125 mOhm @ 5.7A, 10V | 4V @ 25µA | 8.7nC @ 10V | 680pF @ 100V | 10V | ±20V | |||
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VIEW |
3,804
In-stock
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Infineon Technologies | MOSFET N-CH 200V 11.3A 8TDSON | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 50W (Tc) | N-Channel | - | 200V | 11.3A (Tc) | 125 mOhm @ 5.7A, 10V | 4V @ 25µA | 8.7nC @ 10V | 680pF @ 100V | 10V | ±20V | |||
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VIEW |
1,056
In-stock
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Infineon Technologies | MOSFET N-CH 200V 34A TO263-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 136W (Tc) | N-Channel | - | 200V | 34A (Tc) | 32 mOhm @ 34A, 10V | 4V @ 90µA | 29nC @ 10V | 2350pF @ 100V | 10V | ±20V | |||
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VIEW |
3,466
In-stock
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Infineon Technologies | MOSFET N-CH 200V 34A | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 136W (Tc) | N-Channel | - | 200V | 34A (Tc) | 32 mOhm @ 34A, 10V | 4V @ 90µA | 29nC @ 10V | 2350pF @ 100V | 10V | ±20V | |||
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VIEW |
1,332
In-stock
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Infineon Technologies | MOSFET N-CH 200V 7A 8TSDSON | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8 | 34W (Tc) | N-Channel | - | 200V | 7A (Tc) | 225 mOhm @ 3.5A, 10V | 4V @ 13µA | 5.6nC @ 10V | 430pF @ 100V | 10V | ±20V | |||
