Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FDS5680
RFQ
VIEW
RFQ
1,385
In-stock
ON Semiconductor MOSFET N-CH 60V 8A 8-SO PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 60V 8A (Ta) 20 mOhm @ 8A, 10V 4V @ 250µA 42nC @ 10V 1850pF @ 15V 6V, 10V ±20V
FDB16AN08A0
RFQ
VIEW
RFQ
1,038
In-stock
ON Semiconductor MOSFET N-CH 75V 58A TO-263AB PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK 135W (Tc) N-Channel - 75V 9A (Ta), 58A (Tc) 16 mOhm @ 58A, 10V 4V @ 250µA 42nC @ 10V 1857pF @ 25V 6V, 10V ±20V