Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FDS5682
RFQ
VIEW
RFQ
1,504
In-stock
ON Semiconductor MOSFET N-CH 60V 7.5A 8-SOIC PowerTrench® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 60V 7.5A (Ta) 21 mOhm @ 7.5A, 10V 2V @ 250µA 35nC @ 10V 1650pF @ 25V 4.5V, 10V ±20V
FDD86110
RFQ
VIEW
RFQ
1,334
In-stock
ON Semiconductor MOSFET N-CH 100V 12.5A DPAK-3 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-PAK (TO-252) 3.1W (Ta), 127W (Tc) N-Channel - 100V 12.5A (Ta), 50A (Tc) 10.2 mOhm @ 12.5A, 10V 4V @ 250µA 35nC @ 10V 2265pF @ 50V 6V, 10V ±20V
FDS3590
RFQ
VIEW
RFQ
1,611
In-stock
ON Semiconductor MOSFET N-CH 80V 6.5A 8SOIC PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 80V 6.5A (Ta) 39 mOhm @ 6.5A, 10V 4V @ 250µA 35nC @ 10V 1180pF @ 40V 6V, 10V ±20V