Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FDMC86106LZ
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3,142
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ON Semiconductor MOSFET N-CH 100V 3.3A POWER33 PowerTrench® Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN 8-MLP (3.3x3.3) 2.3W (Ta), 19W (Tc) N-Channel - 100V 3.3A (Ta), 7.5A (Tc) 103 mOhm @ 3.3A, 10V 2.2V @ 250µA 6nC @ 10V 310pF @ 50V 4.5V, 10V ±20V
FDD86113LZ
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2,397
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ON Semiconductor MOSFET N-CH 100V 4.2A DPAK-3 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-PAK (TO-252) 3.1W (Ta), 29W (Tc) N-Channel - 100V 4.2A (Ta), 5.5A (Tc) 104 mOhm @ 4.2A, 10V 3V @ 250µA 6nC @ 10V 285pF @ 50V 4.5V, 10V ±20V
FDC86244
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RFQ
3,296
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ON Semiconductor MOSFET N-CH 150V 2.3A 6SSOT PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 SuperSOT™-6 1.6W (Ta) N-Channel - 150V 2.3A (Ta) 144 mOhm @ 2.3A, 10V 4V @ 250µA 6nC @ 10V 345pF @ 75V 6V, 10V ±20V
FDMC86116LZ
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2,140
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ON Semiconductor MOSFET N-CH 100V 3.3A 8-MLP PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN 8-MLP (3.3x3.3) 2.3W (Ta), 19W (Tc) N-Channel - 100V 3.3A (Ta), 7.5A (Tc) 103 mOhm @ 3.3A, 10V 2.2V @ 250µA 6nC @ 10V 310pF @ 50V 4.5V, 10V ±20V
FDFS6N754
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1,312
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ON Semiconductor MOSFET N-CH 30V 4A 8-SOIC PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.6W (Ta) N-Channel Schottky Diode (Isolated) 30V 4A (Ta) 56 mOhm @ 4A, 10V 2.5V @ 250µA 6nC @ 10V 299pF @ 15V 4.5V, 10V ±20V