Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FDMC86106LZ
RFQ
VIEW
RFQ
3,142
In-stock
ON Semiconductor MOSFET N-CH 100V 3.3A POWER33 PowerTrench® Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN 8-MLP (3.3x3.3) 2.3W (Ta), 19W (Tc) N-Channel - 100V 3.3A (Ta), 7.5A (Tc) 103 mOhm @ 3.3A, 10V 2.2V @ 250µA 6nC @ 10V 310pF @ 50V 4.5V, 10V ±20V
FDMC86116LZ
RFQ
VIEW
RFQ
2,140
In-stock
ON Semiconductor MOSFET N-CH 100V 3.3A 8-MLP PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN 8-MLP (3.3x3.3) 2.3W (Ta), 19W (Tc) N-Channel - 100V 3.3A (Ta), 7.5A (Tc) 103 mOhm @ 3.3A, 10V 2.2V @ 250µA 6nC @ 10V 310pF @ 50V 4.5V, 10V ±20V
FDT86106LZ
RFQ
VIEW
RFQ
1,772
In-stock
ON Semiconductor MOSFET N-CH 100V 3.2A SOT-223-4 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 2.2W (Ta) N-Channel - 100V 3.2A (Ta) 108 mOhm @ 3.2A, 10V 2.2V @ 250µA 7nC @ 10V 315pF @ 50V 4.5V, 10V ±20V
FDMC86102LZ
RFQ
VIEW
RFQ
649
In-stock
ON Semiconductor MOSFET N-CH 100V 7A 8MLP PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN 8-MLP (3.3x3.3) 2.3W (Ta), 41W (Tc) N-Channel - 100V 7A (Ta), 18A (Tc) 24 mOhm @ 6.5A, 10V 2.2V @ 250µA 22nC @ 10V 1290pF @ 50V 4.5V, 10V ±20V