Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FDS6298
RFQ
VIEW
RFQ
2,803
In-stock
ON Semiconductor MOSFET N-CH 30V 13A 8-SOIC PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 3W (Ta) N-Channel - 30V 13A (Ta) 9 mOhm @ 13A, 10V 3V @ 250µA 14nC @ 5V 1108pF @ 15V 4.5V, 10V ±20V
FDS6679
RFQ
VIEW
RFQ
2,463
In-stock
ON Semiconductor MOSFET P-CH 30V 13A 8SOIC PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 13A (Ta) 9 mOhm @ 13A, 10V 3V @ 250µA 100nC @ 10V 3939pF @ 15V 4.5V, 10V ±25V
FDD8647L
RFQ
VIEW
RFQ
3,252
In-stock
ON Semiconductor MOSFET N-CH 40V 14A DPAK PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-PAK (TO-252) 3.1W (Ta), 43W (Tc) N-Channel - 40V 14A (Ta), 42A (Tc) 9 mOhm @ 13A, 10V 3V @ 250µA 28nC @ 10V 1640pF @ 20V 4.5V, 10V ±20V