Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FDFMA3P029Z
RFQ
VIEW
RFQ
2,516
In-stock
ON Semiconductor MOSFET P CH 30V 3.3A MICRO 2X2 PowerTrench® Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-VDFN Exposed Pad 6-MicroFET (2x2) 1.4W (Ta) P-Channel Schottky Diode (Isolated) 30V 3.3A (Ta) 87 mOhm @ 3.3A, 10V 3V @ 250µA 10nC @ 10V 435pF @ 15V 4.5V, 10V ±25V
FDFS2P102A
RFQ
VIEW
RFQ
1,935
In-stock
ON Semiconductor MOSFET P-CH 20V 3.3A 8-SOIC PowerTrench® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 900mW (Ta) P-Channel Schottky Diode (Isolated) 20V 3.3A (Ta) 125 mOhm @ 3.3A, 10V 3V @ 250µA 3nC @ 5V 182pF @ 10V 4.5V, 10V ±20V
FDMA86151L
RFQ
VIEW
RFQ
614
In-stock
ON Semiconductor MOSFET N-CH 100V 3.3A 6-MLP PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-MicroFET (2x2) 2.4W (Ta) N-Channel - 100V 3.3A (Ta) 88 mOhm @ 3.3A, 10V 3V @ 250µA 7.3nC @ 10V 450pF @ 50V 4.5V, 10V ±20V