Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FDD850N10LD
RFQ
VIEW
RFQ
664
In-stock
ON Semiconductor MOSFET N-CH 100V 15.3A DPAK PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-5, DPak (4 Leads + Tab), TO-252AD TO-252-5 42W (Tc) N-Channel - 100V 15.3A (Tc) 75 mOhm @ 12A, 10V 2.5V @ 250µA 28.9nC @ 10V 1465pF @ 25V 5V, 10V ±20V
FDD4243
RFQ
VIEW
RFQ
866
In-stock
ON Semiconductor MOSFET P-CH 40V 6.7A DPAK PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-PAK (TO-252AA) 42W (Tc) P-Channel - 40V 6.7A (Ta), 14A (Tc) 44 mOhm @ 6.7A, 10V 3V @ 250µA 29nC @ 10V 1550pF @ 20V 4.5V, 10V ±20V