Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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ON Semiconductor MOSFET P-CH 20V 3A SSOT-6 PowerTrench® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-SSOT 1.5W (Ta) P-Channel Schottky Diode (Isolated) 20V 3A (Ta) 150 mOhm @ 3A, 4.5V 1.5V @ 250µA 4.7nC @ 10V 445pF @ 10V 2.5V, 4.5V ±12V
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ON Semiconductor MOSFET P-CH 20V 2.2A SSOT-6 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 SuperSOT™-6 960mW (Ta) P-Channel Schottky Diode (Isolated) 20V 2.2A (Ta) 150 mOhm @ 2.2A, 4.5V 1.5V @ 250µA 5.2nC @ 4.5V 369pF @ 10V 2.5V, 4.5V ±12V