Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FDZ193P
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ON Semiconductor MOSFET P-CH 20V 3A 8-WLCSP PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UFBGA, WLCSP 6-WLCSP 1.9W (Ta) P-Channel - 20V 3A (Ta) 90 mOhm @ 1A, 4.5V 1.5V @ 250µA 10nC @ 10V 660pF @ 10V 1.7V, 4.5V ±12V
FDMA8884
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1,529
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ON Semiconductor MOSFET N-CH 30V 6.5A 6-MLP 2X2 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-VDFN Exposed Pad 6-MicroFET (2x2) 1.9W (Ta) N-Channel - 30V 6.5A (Ta), 8A (Tc) 23 mOhm @ 6.5A, 10V 3V @ 250µA 7.5nC @ 10V 450pF @ 15V 4.5V, 10V ±20V
FDZ197PZ
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2,580
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ON Semiconductor MOSFET P-CH 20V 3.8A 6-WLCSP PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UFBGA, WLCSP 6-WLCSP 1.9W (Ta) P-Channel - 20V 3.8A (Ta) 64 mOhm @ 2A, 4.5V 1V @ 250µA 25nC @ 4.5V 1570pF @ 10V 1.5V, 4.5V ±8V
FDZ191P
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1,036
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ON Semiconductor MOSFET P-CH 20V 3A 6WLCSP PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UFBGA, WLCSP 6-WLCSP 1.9W (Ta) P-Channel - 20V 3A (Ta) 85 mOhm @ 1A, 4.5V 1.5V @ 250µA 13nC @ 10V 800pF @ 10V 1.5V, 4.5V ±8V
FDZ391P
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3,135
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ON Semiconductor MOSFET P-CH 20V 3A 6-WLCSP PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-XFBGA, WLCSP 6-WLCSP (1.0x1.5) 1.9W (Ta) P-Channel - 20V 3A (Ta) 85 mOhm @ 1A, 4.5V 1.5V @ 250µA 13nC @ 4.5V 1065pF @ 10V 1.5V, 4.5V ±8V