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13 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,540
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CH 500V 5.6A TO252 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 90W (Tc) | N-Channel | - | 500V | 5.6A (Ta) | 1.4 Ohm @ 2.8A, 10V | 4V @ 250µA | 25nC @ 10V | 900pF @ 25V | 10V | ±30V | ||||
VIEW |
1,470
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 600V 11.5A 5DFN | DTMOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 104W (Tc) | N-Channel | Super Junction | 600V | 11.5A (Ta) | 300 mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | ||||
VIEW |
3,712
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 600V 11.5A DPAK | DTMOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | Super Junction | 600V | 11.5A (Ta) | 340 mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | ||||
VIEW |
2,969
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 20A 8SOP | U-MOSVI-H | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 30W (Tc) | N-Channel | - | 40V | 20A (Ta) | 11.3 mOhm @ 10A, 10V | 2.3V @ 200µA | 25nC @ 10V | 2110pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
3,867
In-stock
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Renesas Electronics America | MOSFET N-CH 40V 40A LFPAK | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 55W (Tc) | N-Channel | - | 40V | 40A (Ta) | 4.9 mOhm @ 20A, 10V | - | 25nC @ 10V | 2000pF @ 10V | 10V | ±20V | ||||
VIEW |
1,951
In-stock
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STMicroelectronics | MOSFET N-CH 650V 9A DPAK | MDmesh™ II | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 90W (Tc) | N-Channel | - | 650V | 9A (Tc) | 480 mOhm @ 4.5A, 10V | 4V @ 250µA | 25nC @ 10V | 850pF @ 50V | 10V | ±25V | ||||
VIEW |
666
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 11.5A DPAK | DTMOSV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | - | 600V | 11.5A (Tc) | 290 mOhm @ 5.8A, 10V | 4V @ 450µA | 25nC @ 10V | 730pF @ 300V | 10V | ±30V | ||||
VIEW |
1,694
In-stock
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Nexperia USA Inc. | MOSFET P-CH 30V 3A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1.65W (Ta) | P-Channel | - | 30V | 3A (Tc) | 250 mOhm @ 1A, 10V | 2.8V @ 1mA | 25nC @ 10V | 250pF @ 20V | 10V | ±20V | ||||
VIEW |
2,091
In-stock
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Nexperia USA Inc. | MOSFET P-CH 30V 3A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1.65W (Ta) | P-Channel | - | 30V | 3A (Tc) | 250 mOhm @ 1A, 10V | 2.8V @ 1mA | 25nC @ 10V | 250pF @ 20V | 10V | ±20V | ||||
VIEW |
1,673
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 11.1A DPAK-0S | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | - | 650V | 11.1A (Ta) | 440 mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | ||||
VIEW |
3,304
In-stock
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Rohm Semiconductor | MOSFET N-CH 250V 8A SOT-428 | - | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | CPT3 | 850mW (Ta), 20W (Tc) | N-Channel | - | 250V | 8A (Ta) | 300 mOhm @ 4A, 10V | 5V @ 1mA | 25nC @ 10V | 1440pF @ 25V | 10V | ±30V | ||||
VIEW |
730
In-stock
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Rohm Semiconductor | MOSFET P-CH 30V 7.5A 8SOP | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 2W (Ta) | P-Channel | - | 30V | - | 23.5 mOhm @ 7.5A, 10V | 2.5V @ 1mA | 25nC @ 10V | 1250pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
1,477
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 11.5A DPAK | DTMOSV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | - | 650V | 11.5A (Tc) | 290 mOhm @ 5.8A, 10V | 4V @ 450µA | 25nC @ 10V | 730pF @ 300V | 10V | ±30V |