- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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14 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,986
In-stock
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ON Semiconductor | MOSFET N-CH 60V 6A CPH6 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-CPH | 1.6W (Ta) | N-Channel | - | 60V | 6A (Ta) | 43 mOhm @ 3A, 10V | 2.6V @ 1mA | 20nC @ 10V | 1040pF @ 20V | 4V, 10V | ±20V | |||
|
VIEW |
1,652
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 21A SBD 8TSON | U-MOSV-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 21A (Ta) | 9.9 mOhm @ 10.5A, 10V | 2.3V @ 1mA | 20nC @ 10V | 1900pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
2,310
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 11A PS-8 | U-MOSV-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | PS-8 (2.9x2.4) | 840mW (Ta) | N-Channel | - | 30V | 11A (Ta) | 12.9 mOhm @ 5.5A, 10V | 2.5V @ 1mA | 20nC @ 10V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,871
In-stock
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STMicroelectronics | MOSFET N-CH 500V 7.5A DPAK | MDmesh™ II | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 45W (Tc) | N-Channel | - | 500V | 5A (Tc) | 560 mOhm @ 3.7A, 10V | 4V @ 250µA | 20nC @ 10V | 570pF @ 50V | 10V | ±25V | |||
|
VIEW |
3,810
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9.7A 5DFN | DTMOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 88.3W (Tc) | N-Channel | Super Junction | 600V | 9.7A (Ta) | 380 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | |||
|
VIEW |
1,819
In-stock
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Rohm Semiconductor | MOSFET N-CH 600V 7A LPT | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTS (D2PAK) | 40W (Tc) | N-Channel | - | 600V | 7A (Tc) | 620 mOhm @ 2.4A, 10V | 4V @ 1mA | 20nC @ 10V | 390pF @ 25V | 10V | ±20V | |||
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VIEW |
3,367
In-stock
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Rohm Semiconductor | MOSFET N-CH 30V 15A HSMT8 | - | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-HSMT (3.2x3) | 2W (Ta) | N-Channel | - | 30V | 15A (Ta) | 6.7 mOhm @ 15A, 10V | 2.5V @ 1mA | 20nC @ 10V | 1100pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
1,175
In-stock
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Rohm Semiconductor | MOSFET P-CH 30V 4A TSST8 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-TSST | 550mW (Ta) | P-Channel | - | 30V | 4A (Ta) | 45 mOhm @ 4A, 10V | 2.5V @ 1mA | 20nC @ 10V | 1000pF @ 10V | 4V, 10V | ±20V | |||
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VIEW |
904
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 650V 9.7A DPAK | DTMOSV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | - | 650V | 9.7A (Tc) | 380 mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | 590pF @ 300V | 10V | ±30V | |||
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|
VIEW |
1,951
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 600V 9.7A DPAK | DTMOSV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 30W (Tc) | N-Channel | - | 600V | 9.7A (Tc) | 380 mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | 590pF @ 300V | 10V | ±30V | |||
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|
VIEW |
1,485
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 600V 9.7A DPAK | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | Super Junction | 600V | 9.7A (Ta) | 430 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | |||
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VIEW |
2,363
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 9.3A DPAK | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | - | 650V | 9.3A (Ta) | 560 mOhm @ 4.6A, 10V | 3.5V @ 350µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | |||
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VIEW |
988
In-stock
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STMicroelectronics | MOSFET N-CH 600V 12A | MDmesh™ DM2 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 90W (Tc) | N-Channel | - | 600V | 12A (Tc) | 295 mOhm @ 6A, 10V | 5V @ 250µA | 20nC @ 10V | 800pF @ 100V | 10V | ±25V | |||
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|
VIEW |
2,120
In-stock
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Rohm Semiconductor | MOSFET N-CH 600V 8A LPTS | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTS | 50W (Tc) | N-Channel | - | 600V | 8A (Tc) | 950 mOhm @ 4A, 10V | 4V @ 1mA | 20nC @ 10V | 580pF @ 25V | 10V | ±30V | |||
