Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPB023N06N3GATMA1
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Infineon Technologies MOSFET N-CH 60V 140A TO263-7 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7 214W (Tc) N-Channel - 60V 140A (Tc) 2.3 mOhm @ 100A, 10V 4V @ 141µA 198nC @ 10V 16000pF @ 30V 10V ±20V
IPB070N06L G
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1,112
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Infineon Technologies MOSFET N-CH 60V 80A TO-263 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 214W (Tc) N-Channel - 60V 80A (Tc) 6.7 mOhm @ 80A, 10V 2V @ 150µA 126nC @ 10V 4300pF @ 30V 4.5V, 10V ±20V
IPB080N06N G
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1,622
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Infineon Technologies MOSFET N-CH 60V 80A TO-263 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 214W (Tc) N-Channel - 60V 80A (Tc) 7.7 mOhm @ 80A, 10V 4V @ 150µA 93nC @ 10V 3500pF @ 30V 10V ±20V