Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IPB035N08N3GATMA1
RFQ
VIEW
RFQ
1,311
In-stock
Infineon Technologies MOSFET N-CH 80V 100A TO263-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 214W (Tc) N-Channel - 80V 100A (Tc) 3.5 mOhm @ 100A, 10V 3.5V @ 155µA 117nC @ 10V 8110pF @ 40V 6V, 10V ±20V
FDMS86368-F085
RFQ
VIEW
RFQ
3,690
In-stock
ON Semiconductor MOSFET N-CH 80V 80A POWER56 Automotive, AEC-Q101, PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN Power56 214W (Tc) N-Channel - 80V 80A (Tc) 4.5 mOhm @ 80A, 10V 4V @ 250µA 75nC @ 10V 4350pF @ 40V 10V ±20V
IPB030N08N3GATMA1
RFQ
VIEW
RFQ
3,824
In-stock
Infineon Technologies MOSFET N-CH 80V 160A TO263-7 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7 214W (Tc) N-Channel - 80V 160A (Tc) 3 mOhm @ 100A, 10V 3.5V @ 155µA 117nC @ 10V 8110pF @ 40V 6V, 10V ±20V