Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPB023N06N3GATMA1
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2,773
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Infineon Technologies MOSFET N-CH 60V 140A TO263-7 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7 214W (Tc) N-Channel - 60V 140A (Tc) 2.3 mOhm @ 100A, 10V 4V @ 141µA 198nC @ 10V 16000pF @ 30V 10V ±20V
FDB024N04AL7
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878
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ON Semiconductor MOSFET N-CH 40V D2PAK-7 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) D²PAK (TO-263) 214W (Tc) N-Channel - 40V 100A (Tc) 2.4 mOhm @ 80A, 10V 3V @ 250µA 109nC @ 10V 7300pF @ 25V 10V ±20V
IPB030N08N3GATMA1
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3,824
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Infineon Technologies MOSFET N-CH 80V 160A TO263-7 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7 214W (Tc) N-Channel - 80V 160A (Tc) 3 mOhm @ 100A, 10V 3.5V @ 155µA 117nC @ 10V 8110pF @ 40V 6V, 10V ±20V
IPB160N04S3H2ATMA1
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3,446
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Infineon Technologies MOSFET N-CH 40V 160A TO263-7 OptiMOS™ Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7-3 214W (Tc) N-Channel - 40V 160A (Tc) 2.1 mOhm @ 80A, 10V 4V @ 150µA 145nC @ 10V 9600pF @ 25V 10V ±20V