- Manufacture :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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,%20SC-63.JPG)
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VIEW |
1,730
In-stock
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ON Semiconductor | MOSFET P-CH 200V 3.7A DPAK | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 45W (Tc) | P-Channel | 200V | 3.7A (Tc) | 1.4 Ohm @ 1.85A, 10V | 5V @ 250µA | 13nC @ 10V | 430pF @ 25V | 10V | ±30V | |||
|
VIEW |
725
In-stock
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Diodes Incorporated | MOSFET BVDSS: 501V 650V TO252 T& | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 48W (Ta) | N-Channel | 600V | 3.7A (Tc) | 2.3 Ohm @ 2A, 10V | 4.5V @ 250µA | 14.3nC @ 10V | 532pF @ 25V | 10V | ±30V | |||
