Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SIHH11N65EF-T1-GE3
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3,882
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Vishay Siliconix MOSFET N-CHAN 600V 24A POWERPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PowerPAK® 8 x 8 130W (Tc) N-Channel 650V 11A (Tc) 382 mOhm @ 6A, 10V 4V @ 250µA 70nC @ 10V 1243pF @ 100V 10V ±30V
SIHH11N65E-T1-GE3
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1,942
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Vishay Siliconix MOSFET N-CHAN 650V 12A POWERPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PowerPAK® 8 x 8 130W (Tc) N-Channel 650V 12A (Tc) 363 mOhm @ 6A, 10V 4V @ 250µA 68nC @ 10V 1257pF @ 100V 10V ±30V
STB10N95K5
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810
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STMicroelectronics MOSFET N-CH 950V 8A D2PAK SuperMESH5™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 130W (Tc) N-Channel 950V 8A (Tc) 800 mOhm @ 4A, 10V 5V @ 100µA 22nC @ 10V 630pF @ 100V 10V ±30V
STB8N90K5
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839
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STMicroelectronics N-CHANNEL 900 V, 0.60 OHM TYP., MDmesh™ K5 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 130W (Tc) N-Channel 900V 8A (Tc) 800 mOhm @ 1.17A, 10V 5V @ 100µA - - 10V ±30V