Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SIHH21N60E-T1-GE3
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3,195
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Vishay Siliconix MOSFET N-CH 600V 20A POWERPAK8X8 - Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PowerPAK® 8 x 8 104W (Tc) N-Channel 600V 20A (Tc) 176 mOhm @ 11A, 10V 4V @ 250µA 83nC @ 10V 2015pF @ 100V 10V ±30V
AOB7S60L
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1,361
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Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V D2PAK aMOS™ Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D²Pak) 104W (Tc) N-Channel 600V 7A (Tc) 600 mOhm @ 3.5A, 10V 3.9V @ 250µA 8.2nC @ 10V 372pF @ 100V 10V ±30V
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3,231
In-stock
Diodes Incorporated MOSFET N-CH 600V 3.3A TO220AB Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 104W (Tc) N-Channel 600V 3.3A (Tc) 3.5 Ohm @ 1.5A, 10V 4V @ 250µA 12.6nC @ 10V 354pF @ 25V 10V ±30V
TSM015NA03CR RLG
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RFQ
920
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 30V 205A 8PDFN - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 104W (Tc) N-Channel 30V 205A (Tc) 1.5 mOhm @ 32A, 10V 2.5V @ 250µA 67nC @ 10V 4243pF @ 15V 4.5V, 10V ±30V