Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
2N7002F,215
RFQ
VIEW
RFQ
984
In-stock
Nexperia USA Inc. MOSFET N-CH 60V 475MA SOT23 TrenchMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB (SOT23) 830mW (Ta) N-Channel - 60V 475mA (Ta) 2 Ohm @ 500mA, 10V 2.5V @ 250µA 0.69nC @ 10V 50pF @ 10V 4.5V, 10V ±30V
2N7002E,215
RFQ
VIEW
RFQ
3,110
In-stock
Nexperia USA Inc. MOSFET N-CH 60V 0.385A SOT23 TrenchMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB (SOT23) 830mW (Ta) N-Channel - 60V 385mA (Ta) 3 Ohm @ 500mA, 10V 2.5V @ 250µA 0.69nC @ 10V 50pF @ 10V 4.5V, 10V ±30V
PMV213SN,215
RFQ
VIEW
RFQ
778
In-stock
Nexperia USA Inc. MOSFET N-CH 100V 1.9A SOT23 TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB (SOT23) 280mW (Tj) N-Channel - 100V 1.9A (Tc) 250 mOhm @ 500mA, 10V 4V @ 1mA 7nC @ 10V 330pF @ 20V 10V ±30V