- Manufacture :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,383
In-stock
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Texas Instruments | MOSFET P-CH 8V 3A 6DSBGA | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFBGA, DSBGA | 6-DSBGA | 750mW (Ta) | P-Channel | - | 8V | 3A (Ta) | 19.4 mOhm @ 1.5A, 4.5V | 1.1V @ 250µA | 6.3nC @ 4.5V | 914pF @ 4V | 1.8V, 4.5V | -6V | |||
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VIEW |
3,830
In-stock
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Texas Instruments | MOSFET P-CH 8V 3A 6DSBGA | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFBGA, DSBGA | 6-DSBGA | 750mW (Ta) | P-Channel | - | 8V | 3A (Ta) | 19.4 mOhm @ 1.5A, 4.5V | 1.1V @ 250µA | 6.3nC @ 4.5V | 914pF @ 4V | 1.8V, 4.5V | -6V | |||
|
VIEW |
1,744
In-stock
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Diodes Incorporated | MOSFET P-CH 8V 10A U-WLB1515-9 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 9-UFBGA, WLBGA | U-WLB1515-9 | 890mW (Ta) | P-Channel | - | 8V | 10A (Ta) | 10 mOhm @ 2A, 4.5V | 1.1V @ 250µA | 10.5nC @ 4.5V | 1060pF @ 4V | 2.5V, 4.5V | -6V | |||
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|
VIEW |
2,041
In-stock
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Texas Instruments | MOSFET P-CH 8V 10A 9DSBGA | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 9-UFBGA, DSBGA | 9-DSBGA | 1.5W (Ta) | P-Channel | - | 8V | 10A (Ta) | 12.2 mOhm @ 2A, 4.5V | 1.1V @ 250µA | 8.4nC @ 4.5V | 1390pF @ 4V | 2.5V, 4.5V | -6V | |||
