Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
DMN3070SSN-7
RFQ
VIEW
RFQ
2,889
In-stock
Diodes Incorporated MOSFET N-CH 30V 4.2A SC59 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SC-59 780mW (Ta) N-Channel 30V 4.2A (Ta) 40 mOhm @ 4.2A, 10V 2.1V @ 250µA 13.2nC @ 10V 697pF @ 15V 4.5V, 10V ±20V
ZXMP3A16N8TA
RFQ
VIEW
RFQ
3,636
In-stock
Diodes Incorporated MOSFET P-CH 30V 5.6A 8-SOIC - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.9W (Ta) P-Channel 30V 5.6A (Ta) 40 mOhm @ 4.2A, 10V 1V @ 250µA 29.6nC @ 10V 1022pF @ 15V 4.5V, 10V ±20V