- Series :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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- Input Capacitance (Ciss) (Max) @ Vds :
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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,626
In-stock
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Diodes Incorporated | MOSFET N-CH 60V 100MA 3-DFN | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-UFDFN | 3-X1DFN1006 | 470mW (Ta) | N-Channel | - | 60V | 100mA (Ta) | 2 Ohm @ 100mA, 4V | 1V @ 250µA | 0.45nC @ 4.5V | 32pF @ 25V | 1.5V, 4V | ±20V | |||
|
VIEW |
3,695
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.1A USM | π-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | USM | 150mW (Ta) | N-Channel | - | 20V | 100mA (Ta) | 3 Ohm @ 10mA, 4V | 1.1V @ 100µA | - | 9.3pF @ 3V | 1.5V, 4V | ±10V | |||
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|
VIEW |
2,183
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 30V 0.1A USM | π-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | USM | 150mW (Ta) | P-Channel | - | 30V | 100mA (Ta) | 12 Ohm @ 10mA, 4V | 1.7V @ 100µA | - | 9.1pF @ 3V | 2.5V, 4V | ±20V | |||
|
VIEW |
941
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 30V 0.1A VESM | π-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-723 | VESM | 150mW (Ta) | P-Channel | - | 30V | 100mA (Ta) | 12 Ohm @ 10mA, 4V | 1.7V @ 100µA | - | 9.1pF @ 3V | 2.5V, 4V | ±20V | |||
|
VIEW |
3,335
In-stock
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Infineon Technologies | MOSFET N-CH 250V 100MA SOT23 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | 360mW (Ta) | N-Channel | Depletion Mode | 250V | 100mA (Ta) | 14 Ohm @ 100µA, 10V | 1V @ 56µA | 3.5nC @ 5V | 76pF @ 25V | 0V, 10V | ±20V | |||
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VIEW |
3,313
In-stock
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Diodes Incorporated | MOSFET N-CH 60V X2-DFN1006-3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-UFDFN | 3-X1DFN1006 | 470mW (Ta) | N-Channel | - | 60V | 100mA (Ta) | 2 Ohm @ 100mA, 4V | 1V @ 250µA | 0.45nC @ 4.5V | 32pF @ 25V | 1.5V, 4V | ±20V | |||
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VIEW |
1,500
In-stock
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Diodes Incorporated | MOSFET N-CH 100V .1A SOT23-3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 330mW (Ta) | N-Channel | - | 100V | 100mA (Ta) | 10 Ohm @ 500mA, 10V | 2.4V @ 1mA | - | 40pF @ 25V | 10V | ±20V | |||
