Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRLMS5703TR
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1,192
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Infineon Technologies MOSFET P-CH 30V 2.3A 6-TSOP HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Micro6™(SOT23-6) 1.7W (Ta) P-Channel 30V 2.3A (Ta) 200 mOhm @ 1.6A, 10V 1V @ 250µA 11nC @ 10V 170pF @ 25V 4.5V, 10V ±20V
ZXMP6A17E6QTA
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RFQ
3,215
In-stock
Diodes Incorporated MOSFET P-CH 60V 3A SOT-23-6 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 SOT-26 1.1W (Ta) P-Channel 60V 2.3A (Ta) 125 mOhm @ 2.3A, 10V 3V @ 250µA 17.7nC @ 10V 637pF @ 30V 4.5V, 10V ±20V
ZXM62P02E6TA
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RFQ
3,798
In-stock
Diodes Incorporated MOSFET P-CH 20V 2.3A SOT23-6 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 SOT-23-6 1.1W (Ta) P-Channel 20V 2.3A (Ta) 200 mOhm @ 1.6A, 4.5V 700mV @ 250µA 5.8nC @ 4.5V 320pF @ 15V 2.7V, 4.5V ±12V
ZXMP6A17E6TA
RFQ
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RFQ
2,719
In-stock
Diodes Incorporated MOSFET P-CH 60V 3A SOT-23-6 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 SOT-26 1.1W (Ta) P-Channel 60V 2.3A (Ta) 125 mOhm @ 2.3A, 10V 1V @ 250µA 17.7nC @ 10V 637pF @ 30V 4.5V, 10V ±20V