Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
DMN2170U-7
RFQ
VIEW
RFQ
1,357
In-stock
Diodes Incorporated MOSFET N-CH 20V 2.3A SOT23-3 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 600mW (Ta) N-Channel - 20V 2.3A (Ta) 70 mOhm @ 3A, 4.5V 1V @ 250µA - 217pF @ 10V 1.5V, 4.5V ±12V
SI2319DS-T1-E3
RFQ
VIEW
RFQ
1,526
In-stock
Vishay Siliconix MOSFET P-CH 40V 2.3A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) P-Channel - 40V 2.3A (Ta) 82 mOhm @ 3A, 10V 3V @ 250µA 17nC @ 10V 470pF @ 20V 4.5V, 10V ±20V
BSR606NH6327XTSA1
RFQ
VIEW
RFQ
1,198
In-stock
Infineon Technologies MOSFET N-CH 60V 2.3A SC59 Automotive, AEC-Q101, OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SC-59 500mW (Ta) N-Channel - 60V 2.3A (Ta) 60 mOhm @ 2.3A, 10V 2.3V @ 15µA 5.6nC @ 5V 657pF @ 25V 4.5V, 10V ±20V
SI2319DS-T1-GE3
RFQ
VIEW
RFQ
2,016
In-stock
Vishay Siliconix MOSFET P-CH 40V 2.3A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 - 750mW (Ta) P-Channel - 40V 2.3A (Ta) 82 mOhm @ 3A, 10V 3V @ 250µA 17nC @ 10V 470pF @ 20V 10V ±20V
IRLML9303TRPBF
RFQ
VIEW
RFQ
1,296
In-stock
Infineon Technologies MOSFET P-CH 30V 2.3A SOT-23-3 HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 Micro3™/SOT-23 1.25W (Ta) P-Channel - 30V 2.3A (Ta) 165 mOhm @ 2.3A, 10V 2.4V @ 10µA 2nC @ 4.5V 160pF @ 25V 4.5V, 10V ±20V
BSS806NEH6327XTSA1
RFQ
VIEW
RFQ
2,525
In-stock
Infineon Technologies MOSFET N-CH 20V 2.3A SOT23 Automotive, AEC-Q101, HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SOT23-3 500mW (Ta) N-Channel - 20V 2.3A (Ta) 57 mOhm @ 2.3A, 2.5V 0.75V @ 11µA 1.7nC @ 2.5V 529pF @ 10V 1.8V, 2.5V ±8V
BSS806NH6327XTSA1
RFQ
VIEW
RFQ
910
In-stock
Infineon Technologies MOSFET N-CH 20V 2.3A SOT23 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SOT23-3 500mW (Ta) N-Channel - 20V 2.3A (Ta) 57 mOhm @ 2.3A, 2.5V 750mV @ 11µA 1.7nC @ 2.5V 529pF @ 10V 1.8V, 2.5V ±8V
BSS306NH6327XTSA1
RFQ
VIEW
RFQ
1,539
In-stock
Infineon Technologies MOSFET N-CH 30V 2.3A SOT23 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SOT23-3 500mW (Ta) N-Channel - 30V 2.3A (Ta) 57 mOhm @ 2.3A, 10V 2V @ 11µA 1.5nC @ 5V 275pF @ 15V 4.5V, 10V ±20V