- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
|
VIEW |
1,801
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 240MA SOT-23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 350mW (Ta) | N-Channel | 60V | 240mA (Ta) | 3 Ohm @ 250mA, 10V | 2.5V @ 250µA | 0.6nC @ 4.5V | 21pF @ 5V | 4.5V, 10V | ±20V | |||
|
VIEW |
780
In-stock
|
Diodes Incorporated | MOSFET N-CH 50V 0.5A SOT23 | Automotive, AEC-Q101 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 370mW (Ta) | N-Channel | 50V | 500mA (Ta) | 1.6 Ohm @ 500mA, 10V | 1.5V @ 250µA | 0.6nC @ 4.5V | 46pF @ 25V | 2.5V, 10V | ±20V | |||
|
|
VIEW |
835
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 300MA SOT23-3 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236 | 350mW (Ta) | N-Channel | 60V | 300mA (Ta) | 2 Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.6nC @ 4.5V | 30pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
3,166
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 300MA SOT-23 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 350mW (Ta) | N-Channel | 60V | 300mA (Ta) | 2 Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.6nC @ 4.5V | 30pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
2,294
In-stock
|
Diodes Incorporated | MOSFET N-CH 50V 0.5A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 370mW (Ta) | N-Channel | 50V | 500mA (Ta) | 1.6 Ohm @ 500mA, 10V | 1.5V @ 250µA | 0.6nC @ 4.5V | 46pF @ 25V | 2.5V, 10V | ±20V | |||
|
|
VIEW |
2,197
In-stock
|
Diodes Incorporated | MOSFET N-CH 50V 0.3A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 520mW (Ta) | N-Channel | 50V | 300mA (Ta) | 2 Ohm @ 50mA, 5V | 1V @ 250µA | 0.6nC @ 4.5V | 37.1pF @ 25V | 1.8V, 5V | ±12V | |||
|
|
VIEW |
3,046
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 240MA SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | - | 350mW (Ta) | N-Channel | 60V | 240mA (Ta) | 3 Ohm @ 250mA, 10V | 2.5V @ 250µA | 0.6nC @ 4.5V | 21pF @ 5V | 10V | ±20V | |||
|
|
VIEW |
1,813
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 0.4A | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 270mW (Ta) | N-Channel | 60V | 400mA (Ta) | 1.5 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 40pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,698
In-stock
|
Diodes Incorporated | MOSFET P-CH 30V 300MA SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 370mW (Ta) | P-Channel | 30V | 300mA (Ta) | 2.4 Ohm @ 300mA, 10V | 2.4V @ 250µA | 0.6nC @ 4.5V | 51.16pF @ 15V | 4.5V, 10V | ±20V | |||
