- Manufacture :
- Series :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,506
In-stock
|
NXP USA Inc. | MOSFET N-CH 30V 3.1A SOT-23 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 380mW (Ta) | N-Channel | - | 30V | 3.1A (Ta) | 36 mOhm @ 3.1A, 10V | 2.5V @ 250µA | 10nC @ 10V | 330pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,466
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 60V TO-236AB | Automotive, AEC-Q101 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 478mW (Ta), 8.36W (Tc) | N-Channel | - | 60V | 3.1A (Ta) | 60 mOhm @ 3.1A, 10V | 2.7V @ 250µA | 19nC @ 10V | 646pF @ 30V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,949
In-stock
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Vishay Siliconix | MOSFET P-CH 30V 3.1A SOT23-3 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 750mW (Ta) | P-Channel | - | 30V | 3.1A (Ta) | 53 mOhm @ 4A, 10V | 3V @ 250µA | 21nC @ 10V | 540pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,617
In-stock
|
Vishay Siliconix | MOSFET P-CH 30V 3.1A SOT-23 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | - | 750mW (Ta) | P-Channel | - | 30V | 3.1A (Ta) | 53 mOhm @ 4A, 10V | 3V @ 250µA | 21nC @ 10V | 540pF @ 15V | 10V | ±20V | |||
