Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
DMN1008UFDF-13
RFQ
VIEW
RFQ
1,679
In-stock
Diodes Incorporated MOSFET N-CH30V SC-59 Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad U-DFN2020-6 (Type F) 700mW (Ta) N-Channel - 12V 12.2A (Ta) 8 mOhm @ 5A, 4.5V 1V @ 250µA 23.4nC @ 8V 995pF @ 6V 2.5V, 4.5V ±8V
DMT3006LFDF-7
RFQ
VIEW
RFQ
2,028
In-stock
Diodes Incorporated MOSFET BVDSS: 31V 40V,U-DFN2020- Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad U-DFN2020-6 (Type F) 800mW (Ta) N-Channel - 30V 14.1A (Ta) 7 mOhm @ 9A, 10V 3V @ 250µA 22.6nC @ 10V 1320pF @ 15V 3.7V, 10V ±20V
DMP6110SFDF-7
RFQ
VIEW
RFQ
3,152
In-stock
Diodes Incorporated MOSFET P-CH 60V 4.2A UDFN2020-6 Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad U-DFN2020-6 (Type F) 1.97W (Ta) P-Channel - 60V 4.2A (Ta) 110 mOhm @ 4.5A, 10V 3V @ 250µA 17.2nC @ 10V 969pF @ 30V 4.5V, 10V ±20V
DMT2004UFDF-7
RFQ
VIEW
RFQ
1,601
In-stock
Diodes Incorporated MOSFET BVDSS: 8V 24V,U-DFN2020-6 Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad U-DFN2020-6 (Type F) 800mW (Ta), 12.5W (Tc) N-Channel - 24V 14.1A (Ta) 6 mOhm @ 9A, 10V 1.45V @ 250µA 53.7nC @ 10V 1683pF @ 15V 2.5V, 10V ±12V