- Manufacture :
- Operating Temperature :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
|
VIEW |
3,371
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 20V 4.9A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 750mW (Ta) | N-Channel | 20V | 4.9A (Tc) | 33 mOhm @ 4.9A, 4.5V | 1V @ 250µA | 11.2nC @ 4.5V | 500pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
|
VIEW |
2,438
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 20V 6.7A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 1.56W (Tc) | N-Channel | 20V | 6.7A (Tc) | 25 mOhm @ 4A, 4.5V | 800mV @ 250µA | 4nC @ 4.5V | 600pF @ 10V | 1.8V, 4.5V | ±10V | |||
|
VIEW |
1,555
In-stock
|
Diodes Incorporated | MOSFET N-CH 20V 1.24A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 430mW (Ta) | N-Channel | 20V | 1.24A (Ta) | 175 mOhm @ 300mA, 4.5V | 950mV @ 250µA | 1.6nC @ 4.5V | 64.3pF @ 25V | 1.8V, 4.5V | ±8V | |||
|
|
VIEW |
3,282
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 20V 4.9A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 1.25W (Ta) | N-Channel | 20V | 4.9A (Tc) | 33 mOhm @ 4.9A, 4.5V | 1.2V @ 250µA | 11nC @ 4.5V | 900pF @ 10V | 1.8V, 4.5V | ±12V | |||
|
|
VIEW |
3,157
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 20V 5.8A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 1.56W (Tc) | N-Channel | 20V | 5.8A (Tc) | 25 mOhm @ 4A, 4.5V | 800mV @ 250µA | 7.7nC @ 4.5V | 535pF @ 10V | 1.8V, 4.5V | ±10V | |||
|
|
VIEW |
1,183
In-stock
|
Diodes Incorporated | MOSFET N-CH 20V 2A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 600mW (Ta) | N-Channel | 20V | 2A (Ta) | 110 mOhm @ 2.5A, 4.5V | 1V @ 250µA | 2.3nC @ 10V | 188pF @ 10V | 1.8V, 4.5V | ±12V | |||
