Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SI3805DV-T1-GE3
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2,894
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Vishay Siliconix MOSFET P-CH 20V 3.3A 6-TSOP LITTLE FOOT® Last Time Buy Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 1.1W (Ta), 1.4W (Tc) P-Channel Schottky Diode (Isolated) 20V 3.3A (Tc) 84 mOhm @ 3A, 10V 1.5V @ 250µA 12nC @ 10V 330pF @ 10V 2.5V, 10V ±12V
IRFTS9342TRPBF
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3,177
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Infineon Technologies MOSFET P-CH 30V 5.8A 6TSOP HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 6-TSOP 2W (Ta) P-Channel - 30V 5.8A (Ta) 40 mOhm @ 5.8A, 10V 2.4V @ 25µA 12nC @ 10V 595pF @ 25V 4.5V, 10V ±20V
SI3459BDV-T1-E3
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2,525
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Vishay Siliconix MOSFET P-CH 60V 2.9A 6-TSOP TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 3.3W (Tc) P-Channel - 60V 2.9A (Tc) 216 mOhm @ 2.2A, 10V 3V @ 250µA 12nC @ 10V 350pF @ 30V 4.5V, 10V ±20V
SI3459BDV-T1-GE3
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3,181
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Vishay Siliconix MOSFET P-CH 60V 2.9A 6-TSOP TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 2W (Ta), 3.3W (Tc) P-Channel - 60V 2.9A (Tc) 216 mOhm @ 2.2A, 10V 3V @ 250µA 12nC @ 10V 350pF @ 30V 4.5V, 10V ±20V
NTGS4141NT1G
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1,816
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ON Semiconductor MOSFET N-CH 30V 3.5A 6-TSOP - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 6-TSOP 500mW (Ta) N-Channel - 30V 3.5A (Ta) 25 mOhm @ 7A, 10V 3V @ 250µA 12nC @ 10V 560pF @ 24V 4.5V, 10V ±20V