Drain to Source Voltage (Vdss) :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
Default Photo
RFQ
VIEW
RFQ
3,822
In-stock
Infineon Technologies MOSFET N-CH 650V 13A TO263-3 CoolMOS™ C7 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-4, D²Pak (3 Leads + Tab), TO-263AA PG-TO263-3 68W (Tc) N-Channel - 650V 13A (Tc) 130 mOhm @ 5.3A, 10V 4V @ 260µA 24nC @ 10V 1080pF @ 400V 10V ±20V
Default Photo
RFQ
VIEW
RFQ
3,014
In-stock
Infineon Technologies MOSFET N-CH 650V 19A TO263-3 CoolMOS™ C7 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-4, D²Pak (3 Leads + Tab), TO-263AA PG-TO263-3 92W (Tc) N-Channel - 650V 19A (Tc) 120 mOhm @ 7.8A, 10V 4V @ 390µA 34nC @ 10V 1500pF @ 400V 10V ±20V
IPB048N15N5ATMA1
RFQ
VIEW
RFQ
3,428
In-stock
Infineon Technologies MOSFET N-CH 150V 120A TO263-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3 300W (Tc) N-Channel - 150V 120A (Tc) 4.8 mOhm @ 60A, 10V 4.6V @ 264µA 100nC @ 10V 7800pF @ 75V 8V, 10V ±20V
IPB110N20N3LFATMA1
RFQ
VIEW
RFQ
2,246
In-stock
Infineon Technologies MOSFET N-CH 200 D2PAK-3 OptiMOS™ 3 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3 250W (Tc) N-Channel - 200V 88A (Tc) 11 mOhm @ 88A, 10V 4.2V @ 260µA 76nC @ 10V 650pF @ 100V 10V ±20V
IPB033N10N5LFATMA1
RFQ
VIEW
RFQ
2,426
In-stock
Infineon Technologies MOSFET N-CH 100V D2PAK-3 OptiMOS™-5 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3 179W (Tc) N-Channel - 100V 120A (Tc) 3.3 mOhm @ 100A, 10V 4.1V @ 150µA 102nC @ 10V 460pF @ 50V 10V ±20V
IPB100N12S305ATMA1
RFQ
VIEW
RFQ
720
In-stock
Infineon Technologies MOSFET N-CH 120V 100A TO263-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-4, D²Pak (3 Leads + Tab), TO-263AA PG-TO263-3 300W (Tc) N-Channel - 120V 100A (Tc) 5.1 mOhm @ 100A, 10V 4V @ 240µA 185nC @ 10V 11570pF @ 25V 10V ±20V
Default Photo
RFQ
VIEW
RFQ
1,716
In-stock
Infineon Technologies MOSFET N-CH 650V 50A TO263-3 CoolMOS™ C7 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-4, D²Pak (3 Leads + Tab), TO-263AA PG-TO263-3 227W (Tc) N-Channel - 650V 50A (Tc) 40 mOhm @ 24.9A, 10V 4V @ 1.24mA 107nC @ 10V 4340pF @ 400V 10V ±20V
Default Photo
RFQ
VIEW
RFQ
3,756
In-stock
Infineon Technologies MOSFET N-CH 650V 35A TO263-3 CoolMOS™ C7 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-4, D²Pak (3 Leads + Tab), TO-263AA PG-TO263-3 162W (Tc) N-Channel - 650V 35A (Tc) 60 mOhm @ 15.9A, 10V 4V @ 800µA 68nC @ 10V 2850pF @ 400V 10V ±20V
IPB020N10N5LFATMA1
RFQ
VIEW
RFQ
1,740
In-stock
Infineon Technologies MOSFET N-CH 100V D2PAK-3 OptiMOS™-5 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3 313W (Tc) N-Channel - 100V 120A (Tc) 2 mOhm @ 100A, 10V 4.1V @ 270µA 195nC @ 10V 840pF @ 50V 10V ±20V
Default Photo
RFQ
VIEW
RFQ
2,281
In-stock
Infineon Technologies MOSFET N-CH 650V 22A TO263-3 CoolMOS™ C7 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-4, D²Pak (3 Leads + Tab), TO-263AA PG-TO263-3 110W (Tc) N-Channel - 650V 22A (Tc) 99 mOhm @ 9.7A, 10V 4V @ 490µA 42nC @ 10V 1819pF @ 400V 10V ±20V