Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2SK2009TE85LF
RFQ
VIEW
RFQ
953
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 30V 0.2A SMINI - Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SC-59-3 200mW (Ta) N-Channel 30V 200mA (Ta) 2 Ohm @ 50MA, 2.5V 1.5V @ 100µA - 70pF @ 3V 2.5V ±20V
DMN3033LSN-7
RFQ
VIEW
RFQ
2,828
In-stock
Diodes Incorporated MOSFET N-CH 30V 6A SC59-3 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SC-59-3 1.4W (Ta) N-Channel 30V 6A (Ta) 30 mOhm @ 6A, 10V 2.1V @ 250µA 10.5nC @ 5V 755pF @ 10V 4.5V, 10V ±20V
DMN100-7-F
RFQ
VIEW
RFQ
615
In-stock
Diodes Incorporated MOSFET N-CH 30V 1.1A SC59-3 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SC-59-3 500mW (Ta) N-Channel 30V 1.1A (Ta) 240 mOhm @ 1A, 10V 3V @ 1mA 5.5nC @ 10V 150pF @ 10V 4.5V, 10V ±20V
DMP3030SN-7
RFQ
VIEW
RFQ
623
In-stock
Diodes Incorporated MOSFET P-CH 30V 700MA SC59-3 - Active Cut Tape (CT) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SC-59-3 500mW (Ta) P-Channel 30V 700mA (Ta) 250 mOhm @ 400mA, 10V 3V @ 1mA - 160pF @ 10V 4.5V, 10V ±20V