Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BUK78150-55A,115
RFQ
VIEW
RFQ
1,726
In-stock
NXP USA Inc. MOSFET N-CH 55V 5.5A SOT223 Automotive, AEC-Q101, TrenchMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 8W (Tc) N-Channel 55V 5.5A (Tc) 150 mOhm @ 5A, 10V 4V @ 1mA - 230pF @ 25V 10V ±20V
AUIRLL014NTR
RFQ
VIEW
RFQ
2,111
In-stock
Infineon Technologies MOSFET N-CH 55V 2A SOT-223 Automotive, AEC-Q101, HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1W (Ta) N-Channel 55V 2A (Ta) 140 mOhm @ 2A, 10V 2V @ 250µA 14nC @ 10V 230pF @ 25V 4V, 10V ±16V
IRLL014NTRPBF
RFQ
VIEW
RFQ
948
In-stock
Infineon Technologies MOSFET N-CH 55V 2A SOT223 HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1W (Ta) N-Channel 55V 2A (Ta) 140 mOhm @ 2A, 10V 2V @ 250µA 14nC @ 10V 230pF @ 25V 4V, 10V ±16V
BUK78150-55A/CUX
RFQ
VIEW
RFQ
2,402
In-stock
Nexperia USA Inc. MOSFET N-CH 55V 5.5A SOT223 TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 8W (Tc) N-Channel 55V 5.5A (Tc) 150 mOhm @ 5A, 10V 4V @ 1mA - 230pF @ 25V 10V ±20V