- Operating Temperature :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,887
In-stock
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Infineon Technologies | MOSFET N CH 40V 90A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 140W (Tc) | N-Channel | - | 40V | 90A (Tc) | 2.4 mOhm @ 90A, 10V | 3.9V @ 100µA | 134nC @ 10V | 4610pF @ 25V | 6V, 10V | ±20V | |||
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VIEW |
3,805
In-stock
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Infineon Technologies | MOSFET N-CH 30V 179A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 125W (Tc) | N-Channel | - | 30V | 90A (Tc) | 2.2 mOhm @ 90A, 10V | 2.2V @ 100µA | 54nC @ 4.5V | 4945pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
1,088
In-stock
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Infineon Technologies | MOSFET N-CH 75V 87A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 140W (Tc) | N-Channel | - | 75V | 87A (Tc) | 7.2 mOhm @ 52A, 10V | 3.7V @ 100µA | 126nC @ 10V | 4430pF @ 25V | 6V, 10V | ±20V | |||
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VIEW |
3,718
In-stock
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Infineon Technologies | MOSFET P-CH 55V 20A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 79W (Tc) | P-Channel | - | 55V | 20A (Tc) | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | 660pF @ 50V | 4.5V, 10V | ±20V | |||
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VIEW |
2,921
In-stock
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Infineon Technologies | MOSFET N-CH 55V 42A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 91W (Tc) | N-Channel | - | 55V | 42A (Tc) | 11 mOhm @ 37A, 10V | 4V @ 50µA | 60nC @ 10V | 1720pF @ 25V | 10V | ±20V | |||
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VIEW |
3,350
In-stock
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Infineon Technologies | MOSFET N-CH 200V 17A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 3W (Ta), 140W (Tc) | N-Channel | - | 200V | 17A (Tc) | 165 mOhm @ 10A, 10V | 5.5V @ 250µA | 41nC @ 10V | 910pF @ 25V | 10V | ±30V |