- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,172
In-stock
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Vishay Siliconix | MOSFET N-CHANNEL 600V 9A DPAK | E | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 78W (Tc) | N-Channel | - | 600V | 9A (Tc) | 368 mOhm @ 4.5A, 10V | 4.5V @ 250µA | 52nC @ 10V | 778pF @ 100V | 10V | ±30V | |||
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VIEW |
2,108
In-stock
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Vishay Siliconix | MOSFET N-CH 800V 2.8A DPAK | E | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 62.5W (Tc) | N-Channel | - | 800V | 2.8A (Tc) | 2.75 Ohm @ 1A, 10V | 4V @ 250µA | 19.6nC @ 10V | 315pF @ 100V | 10V | ±30V |