Supplier Device Package :
Power Dissipation (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SSM6P16FE(TE85L,F)
RFQ
VIEW
RFQ
3,718
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 0.1A ES6 π-MOSVI Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-563, SOT-666 ES6 150mW (Ta) P-Channel 20V 100mA (Ta) 8 Ohm @ 10mA, 4V - - 11pF @ 3V 1.5V, 4V ±10V
SSM3J16CT(TPL3)
RFQ
VIEW
RFQ
1,775
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 0.1A CST3 π-MOSVI Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-101, SOT-883 CST3 100mW (Ta) P-Channel 20V 100mA (Ta) 8 Ohm @ 10mA, 4V 1.1V @ 100µA - 11pF @ 3V 1.5V, 4V ±10V