- Series :
- Part Status :
- Package / Case :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
608
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 3.2A TSM | π-MOSVI | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 1.25W (Ta) | N-Channel | - | 30V | 3.2A (Ta) | 120 mOhm @ 1.6A, 4V | - | - | 152pF @ 10V | 2.5V, 4V | ±10V | |||
|
VIEW |
1,849
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 3.2A ES6 | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | N-Channel | - | 20V | 3.2A (Ta) | 47 mOhm @ 2A, 4.5V | 1V @ 1mA | 10.8nC @ 4.5V | 510pF @ 10V | 1.5V, 4.5V | ±10V | |||
