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- FET Type :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
730
In-stock
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Vishay Siliconix | MOSFET N-CH 20V 4.3A 6TSOP | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 1.7W (Tc) | N-Channel | - | 20V | 4.3A (Tc) | 55 mOhm @ 4A, 4.5V | 1.6V @ 250µA | 5.5nC @ 4.5V | 405pF @ 10V | 2.5V, 4.5V | ±8V | |||
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VIEW |
2,698
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 3.1A SOT23-3 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 860mW (Ta), 1.6W (Tc) | P-Channel | - | 20V | 3.1A (Tc) | 112 mOhm @ 2.8A, 4.5V | 1V @ 250µA | 10nC @ 4.5V | 405pF @ 10V | 2.5V, 4.5V | ±8V | |||
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VIEW |
3,679
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 3.1A SOT23-3 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 860mW (Ta), 1.6W (Tc) | P-Channel | - | 20V | 3.1A (Tc) | 112 mOhm @ 2.8A, 4.5V | 1V @ 250µA | 10nC @ 4.5V | 405pF @ 10V | 2.5V, 4.5V | ±8V |