Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SI3445ADV-T1-E3
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927
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Vishay Siliconix MOSFET P-CH 8V 4.4A 6-TSOP - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 1.1W (Ta) P-Channel - 8V 4.4A (Ta) 42 mOhm @ 5.8A, 4.5V 1V @ 250µA 19nC @ 4.5V - 1.8V, 4.5V ±8V
SSM3J307T(TE85L,F)
RFQ
VIEW
RFQ
1,998
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 5A TSM U-MOSV Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) P-Channel - 20V 5A (Ta) 31 mOhm @ 4A, 4.5V 1V @ 1mA 19nC @ 4.5V 1170pF @ 10V 1.5V, 4.5V ±8V
SI2323DS-T1-GE3
RFQ
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RFQ
2,979
In-stock
Vishay Siliconix MOSFET P-CH 20V 3.7A SOT23-3 TrenchFET® Not For New Designs Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) P-Channel - 20V 3.7A (Ta) 39 mOhm @ 4.7A, 4.5V 1V @ 250µA 19nC @ 4.5V 1020pF @ 10V 1.8V, 4.5V ±8V
SI2323DS-T1-E3
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RFQ
3,859
In-stock
Vishay Siliconix MOSFET P-CH 20V 3.7A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) P-Channel - 20V 3.7A (Ta) 39 mOhm @ 4.7A, 4.5V 1V @ 250µA 19nC @ 4.5V 1020pF @ 10V 1.8V, 4.5V ±8V
FDT434P
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RFQ
2,089
In-stock
ON Semiconductor MOSFET P-CH 20V 6A SOT-223 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 3W (Ta) P-Channel - 20V 6A (Ta) 50 mOhm @ 6A, 4.5V 1V @ 250µA 19nC @ 4.5V 1187pF @ 10V 2.5V, 4.5V ±8V