- Manufacture :
- Part Status :
- Packaging :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,737
In-stock
|
ON Semiconductor | MOSFET P-CH 20V 2.9A 6MLP | PowerTrench® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WFDFN Exposed Pad | SC-75, MicroFET | 1.4W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 2.9A (Ta) | 112 mOhm @ 2.9A, 4.5V | 1V @ 250µA | 6.5nC @ 4.5V | 400pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
3,445
In-stock
|
Nexperia USA Inc. | MOSFET P-CH 20V 2.3A TO236AB | Automotive, AEC-Q101 | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB | 480mW (Ta) | P-Channel | - | 20V | 2.3A (Ta) | 170 mOhm @ 2A, 4.5V | 950mV @ 250µA | 6.5nC @ 4.5V | 418pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
2,858
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 2.5A 6-WDFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) | 710mW (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 2.5A (Tj) | 70 mOhm @ 2A, 4.5V | 1V @ 250µA | 6.5nC @ 4.5V | 427pF @ 15V | 1.5V, 4.5V | ±8V | |||
|
|
VIEW |
1,348
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 2.5A 6-WDFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) | 710mW (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 2.5A (Tj) | 70 mOhm @ 2A, 4.5V | 1V @ 250µA | 6.5nC @ 4.5V | 427pF @ 15V | 1.5V, 4.5V | ±8V | |||
|
|
VIEW |
1,506
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 2.5A 6-WDFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) | 710mW (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 2.5A (Tj) | 70 mOhm @ 2A, 4.5V | 1V @ 250µA | 6.5nC @ 4.5V | 427pF @ 15V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
2,754
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 2.5A 6-WDFN | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) | 710mW (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 2.5A (Tj) | 70 mOhm @ 2A, 4.5V | 1V @ 250µA | 6.5nC @ 4.5V | 427pF @ 15V | 1.5V, 4.5V | ±8V | |||
|
|
VIEW |
1,163
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 2.5A 6-WDFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) | 710mW (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 2.5A (Tj) | 70 mOhm @ 2A, 4.5V | 1V @ 250µA | 6.5nC @ 4.5V | 427pF @ 15V | 1.5V, 4.5V | ±8V | |||
|
|
VIEW |
1,954
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 2.5A 6-WDFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) | 710mW (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 2.5A (Tj) | 70 mOhm @ 2A, 4.5V | 1V @ 250µA | 6.5nC @ 4.5V | 427pF @ 15V | 1.5V, 4.5V | ±8V | |||
