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- Package / Case :
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- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,692
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A S-MINI | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 600mW (Ta) | P-Channel | - | 20V | 2A (Ta) | 150 mOhm @ 1A, 4.5V | - | 4.6nC @ 4.5V | 270pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
2,890
In-stock
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Diodes Incorporated | MOSFET P-CH 12V 2A X2-DFN1010-3 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | X2-DFN1010-3 | 480mW (Ta) | P-Channel | - | 12V | 2A (Ta) | 100 mOhm @ 2A, 4.5V | 1V @ 250µA | 5.8nC @ 4.5V | 514pF @ 5V | 1.5V, 4.5V | ±8V | |||
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VIEW |
2,655
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A CST3B | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, No Lead | CST3B | - | P-Channel | - | 20V | 2A (Ta) | 103 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | 290pF @ 10V | 1.5V, 4.5V | ±8V |