- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
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8 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,494
In-stock
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ON Semiconductor | MOSFET P-CH 12V 2A SC70-6 | PowerTrench® | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 | 750mW (Ta) | P-Channel | - | 12V | 2A (Ta) | 110 mOhm @ 2A, 4.5V | 1.5V @ 250µA | 7nC @ 4.5V | 477pF @ 6V | 1.8V, 4.5V | ±8V | ||||
VIEW |
3,799
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A S-MINI | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 600mW (Ta) | P-Channel | - | 20V | 2A (Ta) | 150 mOhm @ 1A, 4.5V | - | 4.6nC @ 4.5V | 270pF @ 10V | 1.5V, 4.5V | ±8V | ||||
VIEW |
1,594
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A ES6 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | P-Channel | - | 20V | 2A (Ta) | 130 mOhm @ 1A, 4V | 1V @ 1mA | - | 335pF @ 10V | 1.8V, 4V | ±8V | ||||
VIEW |
1,227
In-stock
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Diodes Incorporated | MOSFET P-CH 12V 2A X2-DFN1010-3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | X2-DFN1010-3 | 480mW (Ta) | P-Channel | - | 12V | 2A (Ta) | 100 mOhm @ 2A, 4.5V | 1V @ 250µA | 5.8nC @ 4.5V | 514pF @ 5V | 1.5V, 4.5V | ±8V | ||||
VIEW |
2,512
In-stock
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ON Semiconductor | MOSFET P-CH 20V 2A SSOT3 | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SuperSOT-3 | 500mW (Ta) | P-Channel | - | 20V | 2A (Ta) | 70 mOhm @ 2A, 4.5V | 1.5V @ 250µA | 10nC @ 4.5V | 779pF @ 10V | 2.5V, 4.5V | ±8V | ||||
VIEW |
1,060
In-stock
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Nexperia USA Inc. | MOSFET P-CH 20V 2A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 480mW (Ta) | P-Channel | - | 20V | 2A (Ta) | 170 mOhm @ 2A, 4.5V | 950mV @ 250µA | 6.5nC @ 4.5V | 418pF @ 10V | 4.5V | ±8V | ||||
VIEW |
2,170
In-stock
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Nexperia USA Inc. | MOSFET P-CH 20V 2A TO-236AB | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 400mW (Ta), 2.8W (Tc) | P-Channel | - | 20V | 2A (Ta) | 120 mOhm @ 1A, 4.5V | 1.1V @ 250µA | 6nC @ 4.5V | 380pF @ 6V | 2.5V, 4.5V | ±8V | ||||
VIEW |
2,079
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A CST3B | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, No Lead | CST3B | - | P-Channel | - | 20V | 2A (Ta) | 103 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | 290pF @ 10V | 1.5V, 4.5V | ±8V |